IRF6638PbF DirectFET Power MOSFET

International Rectifier

Description

PD - 97239 IRF6638PbF IRF6638TRPbF www.DataSheet4U.com DirectFET Power MOSFET RoHs Compliant Typical values (unless otherwise specified) l Lead.
The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

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Datasheet Specifications

Part number: IRF6638PbF
Manufacturer: International Rectifier
File Size: 293.06 KB
Datasheet: IRF6638PbF_InternationalRectifier.pdf
Description: DirectFET Power MOSFET

Features

* Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 150 125 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6638PbF DirectFET Power MOSFET International Rectifier

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