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IRF6638TRPbF, IRF6638PbF DirectFET Power MOSFET

IRF6638TRPbF Description

PD - 97239 IRF6638PbF IRF6638TRPbF www.DataSheet4U.com DirectFET™ Power MOSFET ‚ RoHs Compliant  Typical values (unless otherwise specified) l Lead.
The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

IRF6638TRPbF Features

* Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 150 125 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA

IRF6638TRPbF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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This datasheet PDF includes multiple part numbers: IRF6638TRPbF, IRF6638PbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF6638TRPbF, IRF6638PbF
Manufacturer
International Rectifier
File Size
293.06 KB
Datasheet
IRF6638PbF_InternationalRectifier.pdf
Description
DirectFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6638TRPbF, IRF6638PbF.
Please refer to the document for exact specifications by model.

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DirectFET Power MOSFET International Rectifier
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