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IRF6638TRPbF

DirectFET Power MOSFET

IRF6638TRPbF Features

* Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 150 125 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA

IRF6638TRPbF General Description

The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6638TRPbF Datasheet (293.06 KB)

Preview of IRF6638TRPbF PDF

Datasheet Details

Part number:

IRF6638TRPbF

Manufacturer:

International Rectifier

File Size:

293.06 KB

Description:

Directfet power mosfet.
PD - 97239 IRF6638PbF IRF6638TRPbF www.DataSheet4U.com DirectFET™ Power MOSFET ‚ RoHs Compliant  Typical values (unless otherwise specified) l Lead.

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IRF6638TRPbF DirectFET Power MOSFET International Rectifier

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