) BOTTOM ID, Drain-to-Source Current (A) BOTTOM 10 10 6.0V 1 6.0V ≤60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 1 0.1 1 ≤60µs PU.

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package .

IRF6641TR1PBF

IRF6641TRPBF

IRF6643TRPbF

IRF6644

IRF6644PbF

IRF6645PBF

IRF6645TRPBF

IRF6646

IRF6646PbF

IRF6646TRPbF

IRF6648

IRF6648PbF

IRF6648TRPbF