Datasheet Details
| Part number | IRF6645 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 268.82 KB |
| Description | DirectFET Power MOSFET Typical calues |
| Datasheet |
 IRF6645 Datasheet
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Description
The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.
Features
- 1000.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 6.0 Fig11. Maximum Safe Operating Area 6.0 5.0 VGS(th) Gate threshold Voltage (V) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 ID , Drain Current (A) 4.0 3.0 ID = 1.0A ID = 1.0mA ID = 250µA ID = 50µA 2.0 1.0 0.0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TJ , Ambient Temperature (°C) TJ , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 120 Fig 13. Typic.