Description
The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
Features
- . + -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
Id Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 14b. Gate Charge Waveform
15V
VDS
L
DRIVER
RG V2G0SV
tp
D. U. T IAS
0.01Ω
+ -
VDD
A
Fig 15a. Unclamped Inductive Test Circuit
V(BR)DSS tp
IAS
Fig 15b. Unclamped Inductive Waveforms
VDS VGS RG
10V
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
RD D. U. T. +
-
VDD
Fig 16a. Switching Time Test Circuit 6
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 16b. Switch.