IRF6648 mosfet equivalent, directfet power mosfet.
o-Source Voltage
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RDS(on), Drain-to -Source On Resistance (m Ω)
60 ID = 17A
50
40
30
20
TJ = 125°C 10
0 TJ = 25°C 4 6 8 10 12 14 16
VGS, Gate -to -Source .
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is com.
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