Description
The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- .00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
180 160 140
ID, Drain Current (A)
Fig11. Maximum Safe Operating Area
3.0
2.5
120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0 ID = 100µA ID = 150µA ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 250µA 1.0
1.5
Fig 12. Maximum Drain Current vs. Case Temperature
800
EAS , Single Pulse Avalanche.
IRF6725MTRPBF Datasheet
