IRF6721STRPBF - Power MOSFET
The IRF6721SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries
PD - 96133A IRF6721SPbF IRF6721STRPbF l l l l l l l l l l RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qgs2 1.3nC VDSS Qg tot
IRF6721STRPBF Features
* V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 60 50 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 25µA ID = 100µA ID = 150µA ID = 250µA ID = 1.0mA ID =
