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IRF6720S2TR1PBF

Power MOSFET

IRF6720S2TR1PBF Features

* 1 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical V GS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) ID = 25µ

IRF6720S2TR1PBF General Description

The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in p.

IRF6720S2TR1PBF Datasheet (254.75 KB)

Preview of IRF6720S2TR1PBF PDF

Datasheet Details

Part number:

IRF6720S2TR1PBF

Manufacturer:

International Rectifier

File Size:

254.75 KB

Description:

Power mosfet.
PD - 97315 IRF6720S2TRPbF IRF6720S2TR1PbF l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling.

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IRF6720S2TR1PBF Power MOSFET International Rectifier

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