IRF6720S2TR1PBF Datasheet, Mosfet, International Rectifier

IRF6720S2TR1PBF Features

• Mosfet 5°C ≤60µs PULSE WIDTH Tj = 175°C 2.5V 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 VDS =

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Part number:

IRF6720S2TR1PBF

Manufacturer:

International Rectifier

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254.75kb

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📄 Datasheet

Description:

Power mosfet. The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve impro

IRF6720S2TR1PBF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regard

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IRF6720S2TR1PBF

International Rectifier

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