IRF6720S2TR1PBF Datasheet - International Rectifier

IRF6720S2TR1PBF, Power MOSFET

PD - 97315 IRF6720S2TRPbF IRF6720S2TR1PbF l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling.
The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance i.

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Datasheet Details

Part number:

IRF6720S2TR1PBF

Manufacturer:

International Rectifier

File Size:

254.75 KB

Description:

Power MOSFET

Features

* 1 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical V GS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) ID = 25µ

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6720S2TR1PBF Power MOSFET International Rectifier

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