IRF6722MPBF - Power MOSFET
The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries
PD - 96136 IRF6722MPbF IRF6722MTRPbF RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested l l Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qgs2 1.2nC
IRF6722MPBF Features
* 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 ID = 150µA ID = 1.0mA ID = 1.0A ID = 250µA 1.0 0.
