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IRF6722MPBF Power MOSFET

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Description

PD - 96136 IRF6722MPbF IRF6722MTRPbF RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra .
The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

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Features

* 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 ID = 150µA ID = 1.0mA ID = 1.0A ID = 250µA 1.0 0.

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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