IRF6722SPBF - Power MOSFET
The IRF6722SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries
PD - 96137 IRF6722SPbF IRF6722STRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qgs2 1.2nC
IRF6722SPBF Features
* e Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 3.0 60 50 ID, Drain Current (A) 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA ID = 150µA 1.5 ID = 250µA ID = 1.0mA ID = 1.0A 1.0 -75 -50 -25 0 25 50 75 100 125
