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IRF6722SPBF Power MOSFET

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Description

PD - 96137 IRF6722SPbF IRF6722STRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Co.
The IRF6722SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

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Features

* e Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 3.0 60 50 ID, Drain Current (A) 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA ID = 150µA 1.5 ID = 250µA ID = 1.0mA ID = 1.0A 1.0 -75 -50 -25 0 25 50 75 100 125

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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