Description
PD - 96136 IRF6722MPbF IRF6722MTRPbF RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra .
The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
Features
* 10. Typical Source-Drain Diode Forward Voltage
60 50
ID, Drain Current (A)
Fig11. Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
3.0
2.5
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0 ID = 50µA
1.5
ID = 150µA ID = 1.0mA ID = 1.0A
ID = 250µA 1.0
0.
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t