IRF6725MPBF Power MOSFET

International Rectifier

Description

PD - 96120 IRF6725MPbF IRF6725MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Co.
The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

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Datasheet Specifications

Part number: IRF6725MPBF
Manufacturer: International Rectifier
File Size: 275.40 KB
Datasheet: IRF6725MPBF_InternationalRectifier.pdf
Description: Power MOSFET

Features

* .00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 180 160 140 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 100µA I

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6725MPBF Power MOSFET International Rectifier

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