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IRF6725MPBF

Power MOSFET

IRF6725MPBF Features

* .00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 180 160 140 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 100µA I

IRF6725MPBF General Description

The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .

IRF6725MPBF Datasheet (275.40 KB)

Preview of IRF6725MPBF PDF

Datasheet Details

Part number:

IRF6725MPBF

Manufacturer:

International Rectifier

File Size:

275.40 KB

Description:

Power mosfet.
PD - 96120 IRF6725MPbF IRF6725MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Co.

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IRF6725MPBF Power MOSFET International Rectifier

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