Description
PD - 96120 IRF6725MPbF IRF6725MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Co.
The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
Features
* .00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
180 160 140
ID, Drain Current (A)
Fig11. Maximum Safe Operating Area
3.0
2.5
120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0 ID = 100µA I
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t