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IRG4BC30S-S Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30S-S Features

* Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz)

* Generation 4 IGBT design provides tight parameter distribution and high efficiency C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A n-channel Benefits

IRG4BC30S-S Datasheet (152.77 KB)

Preview of IRG4BC30S-S PDF

Datasheet Details

Part number:

IRG4BC30S-S

Manufacturer:

International Rectifier

File Size:

152.77 KB

Description:

Insulated gate bipolar transistor.

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IRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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