IRG4BC30S Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E

IRG4BC30S

International Rectifier

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Insulated gate bipolar transistor.

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