BUZ45
Key Features
- 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate
- rDS(ON) = 0.600Ω (BUZ45) power field effect transistor designed for applications such
- SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers
- Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.600
- High Input Impedance Ohm, N- Formerly developmental type TA17435
