SI2306 mosfet equivalent, 20v n-channel enhancement mode mosfet.
VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V
Features Advanced trench process technology High Density Cell Design For Ultra Low On-R.
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