n channel mos field effect transistor.
VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20nC
MAXIMUM RATING (Tc=25 )
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KHB4D0N65P KHB4D0N65F
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This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies.
FEATURES VDSS=650V, ID=4A Drain-Sourc.
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