Datasheet4U Logo Datasheet4U.com

LPM3413 - P-Channel Enhancement Mode Field Effect Transistor

Description

The LPM3413 uses advanced trench technology to provide excellent RDS(ON).

This device is suitable for using as a load switch or in PWM applications.

Standard Product LPM3413 is Pb-free.

Features

  • -20V/2.0A,RDS(ON) ≤130mΩ(max. )@VGS=-2.5V.
  • -20V/3A,RDS(ON) ≤95mΩ(max. )@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT23 Package.

📥 Download Datasheet

Datasheet preview – LPM3413

Datasheet Details

Part number LPM3413
Manufacturer Lowpowersemi
File Size 372.61 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LPM3413 Datasheet
Additional preview pages of the LPM3413 datasheet.

📁 Similar Datasheet

Other Datasheets by Lowpowersemi
  • LPM3414 - 20V/3A N-Channel Enhancement Mode Field Effect Transistor
  • LPM3401 - 15V/4A P-Channel Enhancement Mode Field Effect Transistor
  • LPM4953 - Dual P -Channel Enhancement Power MOSFET
  • LPM9007 - 30V/4A P-Channel Enhancement Mode Field Effect Transistor
  • LPM9017 - P-Channel Enhancement Mode Field Effect Transistor
  • LPM9021 - Single P-Channel Power MOSFET
  • LPM9022 - Dual N -Channel Enhancement Power MOSFET
  • LPM9024 - Dual N -Channel Enhancement Power MOSFET

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet LPM3413 P-Channel Enhancement Mode Field Effect Transistor General Description The LPM3413 uses advanced trench technology to provide excellent RDS(ON). This device is suitable for using as a load switch or in PWM applications. Standard Product LPM3413 is Pb-free. LPM3413 is a Green Product ordering option. LPM3413 are electrically identical. Order Information LPM3413 □ □ □ F: Pb-Free Package Type B3: SOT23 Features  -20V/2.0A,RDS(ON) ≤130mΩ(max.)@VGS=-2.5V  -20V/3A,RDS(ON) ≤95mΩ(max.)@VGS=-4.
Published: |