LPM3401 Datasheet - Lowpowersemi

15V/4A P-Channel Enhancement Mode Field Effect Transistor

LPM3401 Features

* -15V/-4.0A,RDS(ON)＜58mΩ(typ.)@VGS=-10V

* -15V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* SOT23 Package Applications

* Portable Media Players/MP3 players

* Cellular and Smart mobile phone

* LCD

* DSC Sensor

LPM3401 General Description

The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebo.

LPM3401 Datasheet (355.92 KB)