LPM3414 Datasheet - Lowpowersemi

LPM3414 20V/3A N-Channel Enhancement Mode Field Effect Transistor

The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications.

LPM3414 Features

* 20V/3A, RDS(ON)＜62mΩ(max.)@VGS=4.5V

* 20V/2.5A, RDS(ON)＜86mΩ(max.)@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* SOT23 Package Applications

* Portable Media Players/MP3 players

* Cellular and Smart mobile phone

* LCD

* DSC Sensor

* Wirel

LPM3414-Lowpowersemi.pdf

LPM3414 Datasheet Preview — Preview of LPM3414 PDF

Datasheet Details

Part number:

LPM3414

Manufacturer:

Lowpowersemi

File Size:

366.31 KB

Description:

20v/3a n-channel enhancement mode field effect transistor.

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LPM3414 LPM3414 20V N-Channel Enhancement Mode Field Effect Transistor Lowpowersemi

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