LPM3414 20V/3A N-Channel Enhancement Mode Field Effect Transistor

Description

Preliminary Datasheet LPM3414 20V/3A N-Channel Enhancement Mode Field Effect Transistor General .
The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: LPM3414
Manufacturer: Lowpowersemi
File Size: 366.31 KB
Datasheet: LPM3414-Lowpowersemi.pdf
Description: 20V/3A N-Channel Enhancement Mode Field Effect Transistor

Features

* 20V/3A, RDS(ON)＜62mΩ(max. )@VGS=4.5V
* 20V/2.5A, RDS(ON)＜86mΩ(max. )@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* notebook computer power management and other battery powered circuits where high-side switching is needed. Order Information LPM3414

LPM3414 Distributors

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LPM3414 20V N-Channel Enhancement Mode Field Effect Transistor Lowpowersemi

Lowpowersemi LPM3414-like datasheet