LPM3414 - 20V/3A N-Channel Enhancement Mode Field Effect Transistor
The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for low voltage applications
LPM3414 Features
* 20V/3A, RDS(ON)＜62mΩ(max.)@VGS=4.5V
* 20V/2.5A, RDS(ON)＜86mΩ(max.)@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* SOT23 Package Applications
* Portable Media Players/MP3 players
* Cellular and Smart mobile phone
* LCD
* DSC Sensor
* Wirel
