LPM9007 Datasheet (Lowpowersemi) - 30V/4A P-Channel Enhancement Mode Field Effect Transistor

LPM9007, 30V/4A P-Channel Enhancement Mode Field Effect Transistor

The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications, no

LPM9007 Features

* -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V

* -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V

* Super high density cell design for extremely low RDC(ON)

* SOT23 Package Applications

* Portable Media Players

* Cellular and Smart mobile phone

* LCD

* DSC Senso