LPM9007 30V/4A P-Channel Enhancement Mode Field Effect Transistor

Description

Preliminary Datasheet LPM9007 30V/4A P-Channel Enhancement Mode Field Effect Transistor General .
The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: LPM9007
Manufacturer: Lowpowersemi
File Size: 665.61 KB
Datasheet: LPM9007-Lowpowersemi.pdf
Description: 30V/4A P-Channel Enhancement Mode Field Effect Transistor

Features

* -30V/-3.0A, RDC(ON)=52mΩ(typ. )@VGS=-4.5V
* -30V/-3.0A,RDC(ON)=80mΩ(typ. )@VGS=-2.5V
* Super high density cell design for extremely low RDC(ON)

Applications

* notebook computer power management and other battery powered circuits where it is high-side switching. Order Information LPM9007

LPM9007 Distributors

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LPM9007 30V P-Channel Enhancement Mode Field Effect Transistor Lowpowersemi

Lowpowersemi LPM9007-like datasheet