Datasheet Details
Part number:
LPM9029C
Manufacturer:
Lowpowersemi
File Size:
450.37 KB
Description:
N and p-channel enhancement power mosfet.
Datasheet Details
Part number:
LPM9029C
Manufacturer:
Lowpowersemi
File Size:
450.37 KB
Description:
N and p-channel enhancement power mosfet.
LPM9029C, N and P-Channel Enhancement Power MOSFET
The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor.
It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for using in DC-DC conversion, power switch and charging circuit.
Standard Product LPM9029C is Pb-f
LPM9029C Features
* Trench Technology
* NMOS: VNDS=20V, IND=12A RNDS(ON) < 26mΩ @ VGS=2.5V RNDS(ON) < 20mΩ @ VGS=4.5V
* PMOS: VPDS=-20V, IPD=-4.5A RPDS(ON) < 100mΩ @ VGS=-2.5V RPDS(ON) < 68mΩ @ VGS=-4.5V
* Super high density cell design
* Extremely Low Threshold Voltage
* Small package SOP-8 A
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