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LPM9017 Datasheet - Lowpowersemi

P-Channel Enhancement Mode Field Effect Transistor

LPM9017 Features

* -30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V

* -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* SOT23 Package Applications

* Portable Media Players

* Cellular and Smart mobile phone

* LCD

* DSC Sensor

* Wireless Card 

LPM9017 General Description

The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebo.

LPM9017 Datasheet (787.15 KB)

Preview of LPM9017 PDF

Datasheet Details

Part number:

LPM9017

Manufacturer:

Lowpowersemi

File Size:

787.15 KB

Description:

P-channel enhancement mode field effect transistor.

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LPM9017 P-Channel Enhancement Mode Field Effect Transistor Lowpowersemi

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