LPM9022 Datasheet (Lowpowersemi) - Dual N -Channel Enhancement Power MOSFET

LPM9022, Dual N -Channel Enhancement Power MOSFET

The LPM9022 integrates two N-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Standard Product LPM9022 is Pb-free and Halog

LPM9022 Features

* Trench Technology

* Single NMOS: VDS=20V, ID=6A RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V

* Super high density cell design

* Extremely Low Threshold Voltage

* Small package DFN-6L 2

* 3mm Order Information LPM9022

* F: Pb-Free Package Ty