LPM4953

Dual P -Channel Enhancement Power MOSFET

LPM4953 Features

* Trench Technology

* PMOS: VDS=-15V RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V RDS(ON) < 42mΩ, ID=5A @ VGS=-10V

* Super high density cell design

* Extremely Low Threshold Voltage

* Small package SOP-8 Order Information LPM4593

* F: Pb-Free Package Type SO:

LPM4953 General Description

The LPM4953 integrates two P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM4953 is Pb-free and Halog.

LPM4953 Datasheet (1.11 MB)