CG2H40120 hemt equivalent, 28v rf power gan hemt.
* Up to 2.5 GHz Operation
* 20 dB Small Signal Gain at 1.0 GHz
* 15 dB Small Signal Gain at 2.0 GHz
* 130 W Typical PSAT
* 70% Efficiency at PSAT
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GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40120 ideal for linear and co.
The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer h.
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