CGH27030S hemt equivalent, gan hemt.
for 28 V in CGH27030S-AMP1
* 1.8 - 2.2 GHz Operation
* 30 W Typical Output Power
* 18 dB Gain at 5 W PAVE
* -39 dBc ACLR at 5 W PAVE
* 33% efficiency .
The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lea.
The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier .
Image gallery
TAGS
Download (Size : 2.71MB)