Description
The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications.
Features
- for 28 V in CGH27030S-AMP1.
- 1.8 - 2.2 GHz Operation.
- 30 W Typical Output Power.
- 18 dB Gain at 5 W PAVE.
- -39 dBc ACLR at 5 W PAVE.
- 33% efficiency at 5 W PAVE.
- High degree of APD and DPD correction can be applied
Features for 28 V in CGH27030S-AMP2.
- 2.3 - 2.7 GHz Operation.
- 30 W Typical Output Power.
- 18.5 dB Gain at 5 W PAVE.
- -39 dBc ACLR at 5 W PAVE.
- 36% efficiency at 5 W PAVE.
- High degree.
CGH27030S Datasheet
