CGH27030S
CGH27030S is GaN HEMT manufactured by MACOM Technology Solutions.
Description
The CGH27030S is an unmatched, gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Tele and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
Package Type: 3x4 DFN PN: CGH27030S
Typical Performance 1.8-2.7 GHz (TC = 25ºC), 28 V
Parameter
1.8 GHz1 2.0 GHz1 2.2 GHz1 2.3 GHz2 2.5 GHz2 2.7 GHz2
Small Signal Gain
Adjacent Channel Power @ PAVE = 5 W
-39.5
-42.1
-39.1
-32.0
-36.4
-33.6
Drain Efficiency @ PAVE = 5 W
Input Return Loss
-4.2
-6.4
-7.7
-7.3
-7.9
-7.2
Notes: 1 Measured in the CGH27030S-AMP1 amplifier circuit, under 7.5 d B PAR single carrier WCDMA signal test model 1 with 64 DPCH 2 Measured in the CGH27030S-AMP2 amplifier circuit, under 7.5 d B PAR single carrier WCDMA signal test model 1 with 64 DPCH
Units d B d Bc % d B
Features for 28 V in CGH27030S-AMP1
- 1.8
- 2.2 GHz Operation
- 30 W Typical Output...
