CGH27030S Datasheet PDF - MACOM GaN HEMT Specs

CGH27030S - GaN HEMT

Datasheet Summary

Description

The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications.

Features

for 28 V in CGH27030S-AMP1.
1.8 - 2.2 GHz Operation.
30 W Typical Output Power.
18 dB Gain at 5 W PAVE.
-39 dBc ACLR at 5 W PAVE.
33% efficiency at 5 W PAVE.
High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-AMP2.
2.3 - 2.7 GHz Operation.
30 W Typical Output Power.
18.5 dB Gain at 5 W PAVE.
-39 dBc ACLR at 5 W PAVE.
36% efficiency at 5 W PAVE.
High degree.

Datasheet Details

Part number	CGH27030S
Manufacturer	MACOM
File Size	2.71 MB
Description	GaN HEMT
Datasheet	CGH27030S Datasheet
Additional preview pages of the CGH27030S datasheet.

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Full PDF Text Transcription

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CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Description The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Package Type: 3x4 DFN PN: CGH27030S Typical Performance 1.8-2.7 GHz (TC = 25ºC), 28 V Parameter 1.8 GHz1 2.0 GHz1 2.2 GHz1 2.3 GHz2 2.5 GHz2 2.7 GHz2 Small Signal Gain 20.0 20.4 19.5 21.1 20.6 20.0 Adjacent Channel Power @ PAVE = 5 W -39.5 -42.1 -39.1 -32.0 -36.4 -33.6 Drain Efficiency @ PAVE = 5 W 31.8 32.8 33.8 37.

Published: Dec 30, 2024 |