CGHV40050 hemt equivalent, gan hemt.
* Up to 4 GHz Operation
* 77 W Typical Output Power
* 17.5 dB Small Signal Gain at 1.8 GHz
* Application Circuit for 0.8 - 2.0 GHz
* 53% Efficiency at.
up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a.
The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The r.
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