PTVA082407NF Datasheet | MACOM Technology Solutions

Description The PTVA082407NF is a 240-watt LDMOS FET manufactured with the 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and input matching that allow for use from 746 MHz to 821 MHz. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-4-2 Peak/Average Ratio, Gain (d B) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 900 m A, ƒ = 755 MHz, 3GPP WCDMA signal, PAR = 10 d B, 3.84 MHz BW Gain Efficiency -20 PAR @ 0.01% CCDF -40 0 25 -60 ptva082407nf_g1 30 35 40 45 50 55 Average Output Power (d Bm) Features - Broadband internal input matching - Typical CW performance, 755 MHz, 48 V - Output power at P1d B = 225 W - Output power at P3d B = 250 W - Gain = 20.5 d B - Efficiency = 43% - Capable of handling 10:1 VSWR @ 48 V, 80 W CW output power - Integrated ESD protection - Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001) - Low thermal resistance - Pb-free and Ro HS pliant RF Characteristics Single-carrier WCDMA Specifications (tested in the production test fixture) VDD = 48 V, IDQ = 900 m A, POUT = 80 W avg, ƒ = 755 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 d B @ 0.01% CCDF Characteristic Linear Gain Drain Efficiency Adjacent Channel Power...