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PTVA047002EV - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.

Features

  • include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 Drain Efficiency (%), Gain (dB) DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg 34 30 Drain Efficiency 26 22 18 Gain 14 ptva047002ev_g5 450 500 550 600 650 700 750 800 850 Frequency (MHz) Features.
  • I.

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Datasheet Details

Part number PTVA047002EV
Manufacturer Infineon
File Size 345.07 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA047002EV Datasheet

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Full PDF Text Transcription

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PTVA047002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz Description The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 Drain Efficiency (%), Gain (dB) DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.
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