MSN0480D Overview
MSN0480D 40V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN0480D Key Features
- VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Load Switching