MSN04C0K Overview
MSN04C0K 40V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN04C0K Key Features
- VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply