MSN0860Z Overview
MSN0860Z 75V(D-S) N-Channel Enhancement Mode Power MOS FET.
MSN0860Z Key Features
- VDS=75V；ID=60A@ VGS=10V； RDS(ON)<8.5mΩ @ VGS=10V
- Special process technology for high ESD capability
- Special designed for Convertors and power controls
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply