MSN08B2K mosfet equivalent, n-channel mosfet.
* VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stabi.
* Hard switched and high frequency circuits
* Uninterruptible power supply
PIN Configuration
Marking and pin a.
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