logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

MBQ40T65FDSC MagnaChip

MBQ40T65FDSC 650V Field Stop IGBT

MBQ40T65FDSC Avg. rating / M : star-14

datasheet Download

MBQ40T65FDSC Datasheet

Features and benefits


• High Speed Switching & Low Power Loss
• VCE(sat) = 1.95V @ IC = 40A
• Eoff = 0.35mJ @ TC = 25°C
• High Input Impedance
• trr = 80ns (typ.) @diF/dt .

Application

TO-247 MBQ40T65FDSC 650V Field Stop IGBT Features
• High Speed Switching & Low Power Loss
• VCE(sat) = 1.95V.

Image gallery

MBQ40T65FDSC MBQ40T65FDSC MBQ40T65FDSC

TAGS
MBQ40T65FDSC
650V
Field
Stop
IGBT
MBQ40T65FESC
MBQ40T65QES
MBQ40T120FDS
MagnaChip
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy