ME50N06A Datasheet | Matsuki

N- Channel 60V (D-S) MOSFET ME50N06A/ME50N06A-G GENERAL DESCRIPTION The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, puter power management and DC to DC converter circuits which need low in-line power loss. PIN CONFIGURATION (TO-252-3L) Top View Features - RDS(ON)≦22mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power...