MGF0905A fet equivalent, high-power gaas fet.
* High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
* High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
* High power added efficiency P.A.E=40%(TYP.) .
The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers.
FEATURES
* High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
* High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
* High power added.
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