MGF0907B Datasheet, Mitsubishi

* Class A operation
* High output power P1dB=40.0dBm(T.Y.P) @f=2.3GHz
* High power gain GLP=10.0dB(TYP.) @f=2.3GHz
* High power added efficiency P..

FEATURES
* Class A operation
* High output power P1dB=40.0dBm(T.Y.P) @f=2.3GHz
* High power gain GLP=.

The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use L & S band applications. FEATURES
* Class A operation
* High output power P1dB=40.0dBm(T.Y.P) @f=2.3GHz
* High power gain GLP=10.0dB(TYP.) @f=2.3GHz
* .