MGF0909A fet equivalent, l /s band power gaas fet.
* High output power P1dB=38dBm(TYP.)
* High power gain GLP=11dB(TYP.)
* High power added efficiency ηadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm
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The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING
Unit:millimeters
FEATURES
* High output power P1dB=38dBm(TYP.)
* High power gain GLP=11dB(TYP.)
* High power added effi.
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