MGF0906B Datasheet, Mitsubishi

* Class A operation
* High output power P1dB=37.0dBm(T.Y.P) @f=2.3GHz
* High power gain GLP=11.0dB(TYP.) @f=2.3GHz
* High power added efficiency P..

FEATURES
* Class A operation
* High output power P1dB=37.0dBm(T.Y.P) @f=2.3GHz
* High power gain GLP=.

The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications. FEATURES
* Class A operation
* High output power P1dB=37.0dBm(T.Y.P) @f=2.3GHz
* High power gain GLP=11.0dB(TYP.) @f=2.3GHz
* High.