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MRF184 - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Key Features

  • 70 0.973 0.974 0.975 0.976 0.978 0.979 0.980 0.980 0.979 0.978 0.974 0.971 0.970 0.969 0.965 ∠φ.
  • 170.
  • 173.
  • 174.
  • 176.
  • 178 177 176 175 174 173 172 172 172 172 172 171 171 171 170 169 169 169 168 168 168 167 167 167 167 166 165 165 164 |S21| 16.01 13.73 12.02 10.62 6.76 4.92 3.82 3.07 2.53 2.14 1.83 1.58 1.39 1.24 1.10 0.96 0.89 0.80 0.73 0.66 0.61 0.57 0.52 0.47 0.43 0.41 0.38 0.36 0.34 0.32 0.31 0.30 0.27 S21 ∠φ 84 82 80 78 71 65 60 55 51 45 41 38 35 32 29.

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Full PDF Text Transcription for MRF184 (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Desi...

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eld-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 60 Watts Power Gain = 11.5 dB Efficiency = 53% • Characterized with Series Equivalent Large–Signal D Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 30:1 VSWR @ 28 Vdc, 945 MH

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