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MRF21125SR3 - RF POWER FIELD EFFECT TRANSISTORS

This page provides the datasheet information for the MRF21125SR3, a member of the MRF21125 RF POWER FIELD EFFECT TRANSISTORS family.

Datasheet Summary

Description

Ferrite Bead (Square), Fair Rite #2743019447 9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X 22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X 5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X 100000 pF Chip Capaci

Features

  • rtion versus Output Power Figure 8. Power Gain versus Output Power MRF21125 MRF21125S MRF21125SR3 6.

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Datasheet preview – MRF21125SR3

Datasheet Details

Part number MRF21125SR3
Manufacturer Motorola
File Size 381.28 KB
Description RF POWER FIELD EFFECT TRANSISTORS
Datasheet download datasheet MRF21125SR3 Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
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