MRF21125SR3, MRF21125 - RF POWER FIELD EFFECT TRANSISTORS

Motorola

MRF21125SR3 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N<.
Ferrite Bead (Square), Fair Rite #2743019447 9.

MRF21125SR3 Features

* rtion versus Output Power Figure 8. Power Gain versus Output Power MRF21125 MRF21125S MRF21125SR3 6 MOTOROLA RF DEVICE DATA IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 176 f = 2110 MHz Zin 2170 MHz VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg. ), 2-Carrier W-CDMA f MHz Zo

MRF21125SR3 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N
* P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2
* carrier W
* CDMA Performance for VDD = 28

📥 Download Datasheet

MRF21125SR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF21125SR3, MRF21125. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF21125SR3, MRF21125
Manufacturer: Motorola
File Size: 381.28 KB
Datasheet: MRF21125_Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTORS
Note: This datasheet PDF includes multiple part numbers: MRF21125SR3, MRF21125.
Please refer to the document for exact specifications by model.

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POWER FIELD EFFECT TRANSISTORS Motorola

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