MTB20N20E Datasheet Tmos Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB20N20E/D ™ Data Sheet TMOS E-FET.

Datasheet Details

Part number	MTB20N20E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	258.71 KB
Description	TMOS POWER FET
Datasheet	MTB20N20E_Motorola.pdf

rmance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe.