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Motorola Electronic Components Datasheet

MTB3N60E Datasheet

TMOS POWER FET

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.
High Energy Power FET
D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated
Temperature
Low Stored Gate Charge for Efficient Switching
Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode
Source–to–Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
G
®
D
S
MTB3N60E
Motorola Preferred Device
TMOS POWER FET
3.0 AMPERES
600 VOLTS
RDS(on) = 2.2 OHMS
CASE 418B–03, Style 2
D2PAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–repetitive
VDSS
VDGR
VGS
VGSM
600 Vdc
600 Vdc
± 20 Vdc
± 40 Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Pulsed
ID 3.0 Adc
ID 2.4
IDM 14
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C(1)
PD 75 Watts
0.6 W/°C
2.5 Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain–to–Source Avalanche Energy — TJ = 25°C
Single Pulse Drain–to–Source Avalanche Energy — TJ = 100°C
Repetitive Pulse Drain–to–Source Avalanche Energy
WDSR(2)
WDSR(3)
290
46
7.5
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case°
Thermal Resistance — Junction to Ambient°
Thermal Resistance — Junction to Ambient(1)
RθJC
RθJA
RθJA
1.67 °C/W
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL 260 °C
(1) When surface mounted to an FR–4 board using the minimum recommended pad size
(2) VDD = 50 V, ID = 3.0 A
(3) Pulse Width and frequency is limited by TJ(max) and thermal response
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MTB3N60E Datasheet

TMOS POWER FET

No Preview Available !

MTB3N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc)
V(BR)DSS
600
— Vdc
Zero Gate Voltage Drain Current
(VDS = 600 V, VGS = 0)
(VDS = 480 V, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0)
IDSS
µAdc
— — 10
— — 100
IGSSF
— — 100 nAdc
IGSSR — — 100 nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
(TJ = 125°C)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 A)
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 A)
(ID = 1.5 A, TJ = 100°C)
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 A)
VGS(th)
Vdc
2.0 — 4.0
1.5 — 3.5
RDS(on) — 2.1 2.2 Ohms
VDS(on)
Vdc
— — 9.0
— — 7.5
gFS
1.5 —
— mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
— 770 —
— 105 —
— 19 —
pF
SWITCHING CHARACTERISTICS*
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(VDD = 300 V, ID 3.0 A,
RL = 100 , RG = 12 ,
VGS(on) = 10 V)
(VDS = 420 V, ID = 3.0 A,
VGS = 10 V)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
— 23 — ns
— 34 —
— 58 —
— 35 —
— 28 31 nC
— 5.0 —
— 17 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Forward Turn–On Time
(IS = 3.0 A, di/dt = 100 A/µs)
Reverse Recovery Time
VSD
ton
trr
— — 1.4 Vdc
— ** — ns
— 400 —
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Ld nH
— 3.5 —
— 4.5 —
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
Ls
— 7.5 —
* Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
** Limited by circuit inductance.
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTB3N60E
Description TMOS POWER FET
Maker Motorola
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