NCE3090K - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCE3090K
Manufacturer	NCE Power Semiconductor
File Size	386.33 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3090K Datasheet
Additional preview pages of the NCE3090K datasheet.

The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (typical) @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

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Published: Jun 2, 2018 |