n-channel enhancement mode power mosfet.
to provide excellent RDS(ON) with low gate charge. It can be
* VDS =30V,ID =95A
used in a wide variety of applications.
RDS(ON)=3.5mΩ (typical) @ VGS=10V
Applica.
RDS(ON)=3.5mΩ (typical) @ VGS=10V
Application
RDS(ON)=5.3mΩ (typical) @ VGS=4.5V
* DC/DC Converter
* High .
The NCE3095G uses advanced trench technology and design General Features
to provide excellent RDS(ON) with low gate charge. It can be
* VDS =30V,ID =95A
used in a wide variety of applications.
RDS(ON)=3.5mΩ (typical) @ VGS=10V
Application
.
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