Schematic diagram
* VDS =30V,ID =9A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) < 17mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterize.

General Features Schematic diagram
* VDS =30V,ID =9A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) < 17mΩ @ VGS=4.5V
* .

The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram
* VDS =30V,ID =9A RDS(ON) < 12mΩ @ VGS=10V RDS(.

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