NCE30NP07S - N and P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE30NP07S
Manufacturer	NCE Power Semiconductor
File Size	466.29 KB
Description	N and P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30NP07S-NCEPowerSemiconductor.pdf

The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

N-channel P-channel.
N-Channel VDS = 30V,ID =6.5A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 37mΩ @ VGS=4.5V.
P-Channel Only Schematic diagram VDS = -30V,ID = -7A RDS(ON) < 32mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V Use.
High power and current handing capability.
Lead free product is acquired.
Surface mount package times Marking and pin assignment gsheng Package Marking and Ordering Information n Device Marking Device Device Package To NCE30NP07S NCE30NP07S SOP-8.

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Published: Jan 22, 2025 |