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NCE30P30K - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Key Features

  • VDS =-30V,ID =-30A RDS(ON).

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Datasheet Details

Part number NCE30P30K
Manufacturer NCE Power Semiconductor
File Size 423.17 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30P30K Datasheet

Full PDF Text Transcription for NCE30P30K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE30P30K. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE30P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30K uses advanced trench technology and design to prov...

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ption The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.

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