NCE30P30K mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage.
General Features
* VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
* High density cell d.
The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
* VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30.
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