NCEP0135AK Datasheet PDF - NCE Power Semiconductor N-Channel Super Trench Power MOSFET Specs

NCEP0135AK - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =100V,ID =35A RDS(ON)=18mΩ (typical) @ VGS=10V RDS(ON)=22mΩ (typical) @ VGS=4.5V Schematic Diagram.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Marking and pin assignment.

Datasheet Details

Part number	NCEP0135AK
Manufacturer	NCE Power Semiconductor
File Size	456.32 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	NCEP0135AK Datasheet
Additional preview pages of the NCEP0135AK datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCEP0135AK NCE N-Channel Super Trench Power MOSFET Description The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =35A RDS(ON)=18mΩ (typical) @ VGS=10V RDS(ON)=22mΩ (typical) @ VGS=4.

Published: Feb 3, 2025 |